لایب سان

Ebook details:
عنوان: Current at the Nanoscale: An Introduction to Nanoelectronics
نویسنده: Colm Durkan
ناشر: World Scientific Pub Co Inc; 2 edition (November 14, 2013)
زبان: English
شابک: 9814383732, 978-9814383738
حجم: 23 Mb
فرمت: True Pdf

Intro; Contents; Preface to Second Edition; Preface to First Edition; 1. Macroscopic Current Flow; 1.1 The Classical (Drude) Model of Electronic Conduction and Ohmâ#x80;#x99;s Law; 1.2 A Primer in Quantum Mechanics; 1.3 The Quantum (Free-Electron) Model of Electronic Conduction; 1.4 The Nearly Free-Electron Model of Electronic Conduction and Band Structure; 1.5 Effective Mass; 1.6 The Origins of Electrical Resistance â#x80;#x94; Phonons; 1.7 Size Effects on Electrical Resistance; 1.8 Overview of Transistors; 1.9 Surface Effects; References; Problems; 2. Quantum Current Flow; 2.1 Why Shrink Devices? 2.2 Point Contacts â#x80;#x94; from Mesoscopic to Atomic2.3 Conductance, Quantum Transmission and the Conductance Quantum; 2.4 Calculation of Transmission Probability and Current Flow in Quantum Systems; 2.4.1 Introduction to the concept of transmission probability and probability flux; 2.4.2 Single potential step; 2.4.3 Single potential barrier; 2.4.3.1 Symmetric barrier: no applied voltage; 2.4.3.2 Asymmetric barrier: current flow due to applied bias; 2.4.4 Double potential barrier; 2.4.4.1 Symmetric barriers: no applied voltage; 2.4.4.2 Tunneling through multiple barriers with no phase coherence 2.4.4.3 Asymmetric barriers, applied voltage2.4.4.4 Resonant tunneling diodes; 2.4.5 A more realistic calculation for a single potential barrier: the WKB approximation; 2.5 Techniques for the Fabrication of Quantum Nanostructures; References; Problems; 3. Mesoscopic Transport: Between the Nanoscale and the Macroscale; 3.1 Introduction; 3.2 Boltzmann Transport Equation; 3.3 Resistivity of Thin Films and Wires, Surface Scattering; 3.3.1 General principles; 3.3.2 1D confinement: thin film; 3.3.3 2D confinement: rectangular wire; 3.3.4 2D confinement: cylindrical wires 3.4 Resistivity of Thin Films and Wires, Grain-Boundary Scattering3.5 Experimental Aspects: How to Measure the Resistance of a Thin Film; References; 4. Scanning-Probe Multimeters; 4.1 Scanning-Probe Microscopy: An Introduction; 4.2 Scanning Tunneling Microscopy; 4.2.1 Basic principles; 4.2.2 Scanning tunneling microscopy in practice; 4.3 Atomic Force Microscopy; 4.3.1 Modes of operation of AFM; 4.3.1.1 Contact mode; 4.3.1.2 Non-contact mode; 4.3.1.3 Intermittent contact (tapping) mode; 4.3.2 Kelvin-probe force microscopy; 4.3.3 Conducting-mode AFM; References 5. Electromigration: Current-Induced Damage5.1 Introduction to Electromigration, Wire Morphology; 5.2 Fundamentals of Electromigration â#x80;#x94; the Electron Wind; 5.3 Electromigration â#x80;#x94; Induced Stress in a Nanowire Device; 5.4 Current-Induced Heating in a Nanowire Device; 5.5 Diffusion of Material, Importance of Surfaces, Failure of Wires; 5.6 Experimental Observations of Electromigration and Heating in Nanowires; 5.6.1 Failure as a function of wire length; 5.6.2 Failure as a function of wire width; 5.7 Experimental Observations of Electromigration in Micron-Scale Wires 5.8 Wire Heating â#x80;#x94; Additional Considerations

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